kw.\*:("Shallow junction")
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On the modeling of transient diffusion and activation of boron during post-implantation annealingPICHLER, P; ORTIZ, C. J; COLOMBEAU, B et al.International Electron Devices Meeting. 2004, pp 967-970, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper
Electrical deactivation and diffusion of boron in preamorphized ultrashallow junctions : Interstitial transport and F co-implant controlCOLOMBEAU, B; SMITH, A. J; PICHLER, P et al.International Electron Devices Meeting. 2004, pp 971-974, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper
Formation of As enriched layer by steam oxidation of As+-implanted SiBAGHIZADEH, A; AGHA-ALIGOL, D; FATHY, D et al.Applied surface science. 2009, Vol 255, Num 11, pp 5857-5860, issn 0169-4332, 4 p.Article
Boron ultra low energy SIMS depth profiling improved by rotating stageBERSANI, M; GIUBERTONI, D; IACOB, E et al.Applied surface science. 2006, Vol 252, Num 19, pp 7315-7317, issn 0169-4332, 3 p.Conference Paper
Transient activation model for antimony in relaxed and strained siliconLAI, Y; BENNETT, N. S; AHN, C et al.Solid-state electronics. 2009, Vol 53, Num 11, pp 1173-1176, issn 0038-1101, 4 p.Article
Formation and control of box-shaped ultra-shallow junction using laser annealing and pre-amorphization implantationKIM, Seong-Dong; PARK, Cheol-Min; WOO, Jason C. S et al.Solid-state electronics. 2005, Vol 49, Num 1, pp 131-135, issn 0038-1101, 5 p.Article
Ionization and mass spectrometry of decaborane for shallow implantation of boron into siliconSOSNOWSKI, M; ALBANO, M. A; BABARAM, V et al.Journal of the Electrochemical Society. 2000, Vol 147, Num 11, pp 4329-4332, issn 0013-4651Article
Photon-induced phonon excitation process as low-temperature nonequillibrium nano-surface modification of siliconSETSUHARA, Yuichi; HASHIDA, Masaki.Surface & coatings technology. 2010, Vol 205, Num 7, pp 1826-1829, issn 0257-8972, 4 p.Article
Laser doping for microelectronics and microtechnologySAMET, Thierry; KERRIEN, Gurwan; VENTURINI, Julien et al.Applied surface science. 2005, Vol 247, Num 1-4, pp 537-544, issn 0169-4332, 8 p.Conference Paper
Low-temperature dopant activation technology using elevated Ge-S/D structureTAKEUCHI, Hideki; RANADE, Pushkar; KING, Tsu-Jae et al.Applied surface science. 2004, Vol 224, Num 1-4, pp 73-76, issn 0169-4332, 4 p.Conference Paper
Laser activation of Ultra Shallow Junctions (USJ) doped by Plasma Immersion Ion Implantation (PIII)VERVISCH, Vanessa; LARMANDE, Yannick; DELAPORTE, Philippe et al.Applied surface science. 2009, Vol 255, Num 10, pp 5647-5650, issn 0169-4332, 4 p.Conference Paper
Nickel germanosilicide contacts formed on heavily boron doped Si1-xGex source/drain junctions for nanoscale CMOSJING LIU; OZTURK, Mehmet C.I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 7, pp 1535-1540, issn 0018-9383, 6 p.Article
Merits of heat assist for melt laser annealingSHIBAHARA, Kentaro; ETO, Takanori; KUROBE, Ken-Ichi et al.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 5, pp 1059-1064, issn 0018-9383, 6 p.Article
Excimer laser annealing: A solution for the future technology nodes ?PRIVITERA, V; LA MAGNA, A; MANNINO, G et al.Proceedings - Electrochemical Society. 2003, pp 137-143, issn 0161-6374, isbn 1-56677-396-2, 7 p.Conference Paper
Characteristics of solid-phase diffused ultra-shallow junction using phosphorus doped silicon oxide films for fabrication of sub-100 nm SOI MOSFETCHO, Won-Ju; IM, Kiju; YANG, Jong-Heon et al.Journal of materials science. 2004, Vol 39, Num 5, pp 1819-1821, issn 0022-2461, 3 p.Article
A physics based approach to ultra-shallow p+-junction formation at the 32nm nodeMOKHBERI, Ali; PELAZ, Lourdes; GRIFFIN, Peter B et al.IEDm : international electron devices meeting. 2002, pp 879-882, isbn 0-7803-7462-2, 4 p.Conference Paper
Modeling of ultrahighly doped shallow junctions for aggressively scaled CMOSKENNEL, H. W; CEA, S. M; LILAK, A. D et al.IEDm : international electron devices meeting. 2002, pp 875-878, isbn 0-7803-7462-2, 4 p.Conference Paper
Sub-500 °C solid-phase epitaxy of ultra-abrupt p+-silicon elevated contacts and diodesCIVALE, Yann; NANVER, Lis K; HADLEY, Peter et al.IEEE electron device letters. 2006, Vol 27, Num 5, pp 341-343, issn 0741-3106, 3 p.Article
A Low-Temperature Microwave Anneal Process for Boron-Doped Ultrathin Ge Epilayer on Si SubstrateLEE, Yao-Jen; HSUEH, Fu-Kuo; HUANG, Shih-Chiang et al.IEEE electron device letters. 2009, Vol 30, Num 2, pp 123-125, issn 0741-3106, 3 p.Article
Mechanisms and application of the Excimer laser doping from spin-on glass sources for USJ fabricationCOUTANSON, S; FOGARASSY, E; VENTURINI, J et al.Applied surface science. 2006, Vol 252, Num 13, pp 4502-4505, issn 0169-4332, 4 p.Conference Paper
Using surface chemistry for defect engineering in ultrashallow junction formationSEEBAUER, E. G.Proceedings - Electrochemical Society. 2005, pp 33-42, issn 0161-6374, isbn 1-56677-463-2, 10 p.Conference Paper
A conventional 45nm CMOS node low-cost platform for general purpose and low power applicationsBOEUF, F; ARNAUD, F; PAIN, L et al.International Electron Devices Meeting. 2004, pp 425-428, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper
Electron holographic characterization of ultra-shallow junctions in Si for nanoscale MOSFETsPARTHA SARATHI CHAKRABORTY; MCCARTNEY, Martha R; JING LI et al.IEEE transactions on nanotechnology. 2003, Vol 2, Num 2, pp 102-109, issn 1536-125X, 8 p.Article
Ultra-shallow junction formation: Current manufacturability issues and future prospectsHEBB, Jeffrey; AGARWAL, Aditya; GOSSMANN, Hans et al.Proceedings - Electrochemical Society. 2003, pp 83-92, issn 0161-6374, isbn 1-56677-396-2, 10 p.Conference Paper
Thermal stability of ultra-shallow junctions in silicon formed by molecular-beam epitaxy using boron delta dopingTHOMPSON, P. E; BENNETT, J.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 211-215, issn 0921-5107Conference Paper